| PART |
Description |
Maker |
| STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 |
N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh⑩Power MOSFET
N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmeshPower MOSFET
N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?Power MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| STP11NM60_07 STB11NM60 STB11NM60-1 STB11NM60T4 STP |
N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| AOTF11N60 AOT11N60 |
600V,11A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| PB-CDM22011-1509 |
600V, 11A N-Channel UltraMOS?Power MOSFET
|
Central Semiconductor C...
|
| STB11NM60 STB11NM60-1 |
N-CHANNEL 600V - 0.4 OHM - 11A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
|
ST Microelectronics
|
| STP4NC80ZFP STP4NC80Z STB4NC80Z STB4NC80Z-1 |
N沟道800V 2.4ohm - 4A条TO-220/FP/D2PAK/I2PAK齐保护的PowerMESH⑩三MOSFET
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRFDC20 |
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=0.32A)
|
IRF[International Rectifier]
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| IRFPC50 C50IRF |
Power MOSFET(Vdss=600V / Rds(on)=0.60ohm / Id=11A)
Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)
|
IRF[International Rectifier]
|
| IRG4BC20MD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
|
IRF[International Rectifier]
|
| BCM94311 BCM4311 |
AIRFORCE 54G 802.11A/B/G PCI EXPRESS CLIENT REFERENCE DESIGN 空军4G02.11a/b/g的PCI Express客户端参考设
|
Broadcom, Corp.
Broadcom Corp.
|
